? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 24 a, v ge = 15 v t j = 25 c 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 70 a i c110 t c = 110 c30a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 60 a (rbsoa) clamped inductive load @ 600 v p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque 1.13/10nm/lb.in. weight 4g ds99167(04/04) g = gate, c = collector, e = emitter, tab = collector features z medium frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers v ces = 600 v i c25 = 70 a v ce(sat) < 1.8 v t fi typ = 82 ns hiperfast tm igbt optimized for 10-25 khz hard switching and up to 150 khz resonant switching ixgp 30n60b2 advance technical data to-220 (i xsp ) g c e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgp 30n60b2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 24 a; v ce = 10 v, 18 26 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 115 pf c res 40 pf q g 66 nc q ge i c = 24 a, v ge = 15 v, v ce = 300 v 9 nc q gc 22 nc t d(on) 13 ns t ri 15 ns t d(off) 110 200 ns t fi 82 150 ns e off 0.32 0.6 mj t d(on) 13 ns t ri 17 ns e on 0.22 mj t d(off) 200 ns t fi 150 ns e off 0.9 mj r thjc 0.65 k/w r thch 0.25 k/w inductive load, t j = 25 c i c = 24 a, v ge = 15 v v ce = 400 v, r g = 5 ? inductive load, t j = 125 c i c = 24 a, v ge = 15 v v ce = 400 v, r g = 5 ? pins: 1 - gate 2 - drain 3 - source 4 - drain
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 v c e - volts i c - amperes v ge = 15v 5v 7v 9v 11v 13v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 45 50 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 45 50 0.511.5 22.53 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 24a i c = 12a v ge = 15v i c = 48a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3 3.6 3.9 4.2 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 48a 24a 12a fig. 6. input admittance 0 25 50 75 100 125 150 175 200 225 250 45678 910111213 v g e - volts i c - amperes t j = -40oc 25oc 125oc ixgp 30n60b2
ixys reserves the right to change limits, test conditions, and dimensions. ixgp 30n60b2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 25 50 75 100 125 150 175 200 225 250 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 1020304050607080 r g - ohms e off - millijoules i c = 12a t j = 125oc v ge = 15v v ce = 400v i c = 24a i c = 48a fig. 9. dependence of turn-off en e r g y on i c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 15 20 25 30 35 40 45 50 i c - amperes e off - millijoules r g = 5 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 48a r g = 5 ? v ge = 15v v ce = 400v i c = 24a i c = 12a fig. 11. dependence of turn-off sw itching time on r g 100 200 300 400 500 600 700 0 1020304050607080 r g - ohms switching time - nanosecond i c = 24a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 400v i c = 12a i c = 48a fig. 12. dependence of turn-off sw itching tim e on i c 60 80 100 120 140 160 180 200 220 240 260 10 15 20 25 30 35 40 45 50 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved fig. 14. gate charge 0 3 6 9 12 15 0 10203040506070 q g - nanocoulombs v g e - volts v ce = 300v i c = 24a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off switching time on temperature 80 100 120 140 160 180 200 220 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanosecond i c = 12a 24a 48a t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 400v i c = 48a 24a 12a fig. 16. maxim um transient therm al resistance 0.1 1.0 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) 0.5 ixgp 30n60b2
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